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 INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
BU2522AX
DESCRIPTION *Collector-Emitter Sustaining Voltage: VCEO(SUS)= 800V (Min) *High Switching Speed APPLICATIONS *Designed for use in horizontal deflection circuits of pc monitors. ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL PARAMETER VALUE UNIT
VCES
Collector- Emitter Voltage(VBE= 0)
1500
V
VCEO
Collector-Emitter Voltage
800
V
VEBO
Emitter-Base Voltage
7.5
V
IC ICM
Collector Current- Continuous
10
A
Collector Current-Peak
25
A
IB
B
Base Current- Continuous
6
A
IBM
Base Current-Peak Collector Power Dissipation @ TC=25 Junction Temperature
9
A
PC
45
W
TJ
150
Tstg
Storage Temperature Range
-55~150
SYMBOL
PARAMETER Thermal Resistance,Junction to Case
MAX 2.8
UNIT /W
Rth j-c
isc Websitewww.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN
BU2522AX
TYP.
MAX
UNIT
VCEO(SUS)
Collector-Emitter Sustaining Voltage
IC= 100mA; IB= 0, L= 25mH
800
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
7.5
V
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 6A; IB= 1.2A
B
5.0
V
VBE(sat)
Base-Emitter Saturation Voltage
IC= 6A; IB= 1.2A
B
1.3 0.25 2.0 0.25
V
ICES
Collector Cutoff Current
VCE= 1500V; VBE= 0 VCE= 1500V; VBE= 0; TC=125 VEB= 7.5V; IC= 0
mA
IEBO
Emitter Cutoff Current
mA
hFE-1
DC Current Gain
IC= 1A; VCE= 5V
10
hFE-2
DC Current Gain
IC= 6A; VCE= 5V
5
8
isc Websitewww.iscsemi.cn
2


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